IPP60R180C7XKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3-1 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | CoolMOS™ C7 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 68W Tc |
| Power Dissipation | 68W |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 260μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 13A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 600V |
| Drain to Source Breakdown Voltage | 600V |
| Input Capacitance | 1.08nF |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 155mOhm |
| Rds On Max | 180 mΩ |
| Height | 20.7mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet