IPP110N20NAAKSA1

IPP110N20NAAKSA1

Trans MOSFET N-CH 200V 88A Automotive 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPP110N20NAAKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 532
  • Description: Trans MOSFET N-CH 200V 88A Automotive 3-Pin(3+Tab) TO-220 (Kg)

Details

Tags

Parameters
Power Dissipation 300W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.7m Ω @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 88A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 560 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptimWatt™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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