IPL65R130C7AUMA1
| Parameters | |
|---|---|
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1670pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 5.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 87 ns |
| Continuous Drain Current (ID) | 15A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 650V |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 75A |
| Avalanche Energy Rating (Eas) | 89 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerTSFN |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | CoolMOS™ C7 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2A (4 Weeks) |
| Number of Terminations | 4 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 102W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 102W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 440μA |
See Relate Datesheet