| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Surface Mount | NO |
| Published | 2013 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Drain to Source Voltage (Vdss) | 700V |
| Polarity/Channel Type | N-CHANNEL |
| JEDEC-95 Code | TO-262AA |
| Max Dual Supply Voltage | 700V |
| Drain-source On Resistance-Max | 0.95Ohm |
| Pulsed Drain Current-Max (IDM) | 12A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |