IPI50R140CP
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 192W Tc |
| Element Configuration | Single |
| Power Dissipation | 192W |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 930μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2540pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 14ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 23A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 500V |
| Drain to Source Breakdown Voltage | 500V |
| Dual Supply Voltage | 550V |
| Nominal Vgs | 3 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet