IPG20N04S409ATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-F8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 20A |
| Drain-source On Resistance-Max | 0.0086Ohm |
| Pulsed Drain Current-Max (IDM) | 80A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 145 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet