IPD80R1K4CEATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO252-3 |
| Weight | 3.949996g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | CoolMOS™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 63W Tc |
| Element Configuration | Single |
| Power Dissipation | 63W |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240μA |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | 3.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 800V |
| Input Capacitance | 570pF |
| Drain to Source Resistance | 1.4Ohm |
| Rds On Max | 1.4 Ω |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet