IPD65R250C6XTMA1
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 400μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 16.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 16.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 650V |
| Drain-source On Resistance-Max | 0.25Ohm |
| Drain to Source Breakdown Voltage | 700V |
| Pulsed Drain Current-Max (IDM) | 46A |
| Avalanche Energy Rating (Eas) | 290 mJ |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 208.3W Tc |
See Relate Datesheet