IPD60R3K3C6ATMA1
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds | 93pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 1.7A |
| Gate to Source Voltage (Vgs) | 30V |
| Max Dual Supply Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 4A |
| Avalanche Energy Rating (Eas) | 6 mJ |
| Height | 2.41mm |
| Length | 6.73mm |
| Width | 6.22mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | CoolMOS™ C6 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 18.1W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
See Relate Datesheet