IPD50R950CEBTMA1
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | CoolMOS™ |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 34W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 950m Ω @ 1.2A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 231pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| FET Feature | Super Junction |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet