IPB033N10N5LFATMA1
| Parameters | |
|---|---|
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™-5 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 179W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 179W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.3m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 64 ns |
| Continuous Drain Current (ID) | 120A |
| Threshold Voltage | 3.3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 23A |
| Drain-source On Resistance-Max | 0.0033Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 480A |
| Avalanche Energy Rating (Eas) | 273 mJ |
| Height | 4.5mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
See Relate Datesheet