IPB017N10N5LFATMA1
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 313W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 313W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.7m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 270μA |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 128 ns |
| Continuous Drain Current (ID) | 31A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 720A |
| Avalanche Energy Rating (Eas) | 979 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 4.5mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™-5 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G6 |
See Relate Datesheet