IKD04N60RATMA1
| Parameters | |
|---|---|
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 75W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 75W |
| Transistor Application | POWER CONTROL |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 8A |
| Reverse Recovery Time | 43 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 20 ns |
| Test Condition | 400V, 4A, 43 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Turn Off Time-Nom (toff) | 342 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 27nC |
| Current - Collector Pulsed (Icm) | 12A |
| Td (on/off) @ 25°C | 14ns/146ns |
| Switching Energy | 90μJ (on), 150μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.7V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | TrenchStop™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
See Relate Datesheet