IHW40N135R3FKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 429W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Power Dissipation | 215W |
| Input Type | Standard |
| Power - Max | 429W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.35kV |
| Max Collector Current | 80A |
| Collector Emitter Breakdown Voltage | 1.35kV |
| Voltage - Collector Emitter Breakdown (Max) | 1350V |
| Collector Emitter Saturation Voltage | 1.85V |
| Test Condition | 600V, 40A, 7.5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 40A |
| IGBT Type | Trench |
| Gate Charge | 365nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | -/343ns |
| Switching Energy | 2.5mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.4V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet