IGB01N120H2ATMA1
| Parameters | |
|---|---|
| Gate Charge | 8.6nC |
| Current - Collector Pulsed (Icm) | 3.5A |
| Td (on/off) @ 25°C | 13ns/370ns |
| Switching Energy | 140μJ |
| RoHS Status | ROHS3 Compliant |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Max Power Dissipation | 28W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 28W |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 3.2A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 800V, 1A, 241 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 1A |
See Relate Datesheet