IDP09E120
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2003 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 69W |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100μA @ 1200V |
| Voltage - Forward (Vf) (Max) @ If | 2.15V @ 9A |
| Forward Current | 23A |
| Max Reverse Leakage Current | 100μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 50A |
| Halogen Free | Halogen Free |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 23A DC |
| Max Reverse Voltage (DC) | 1.2kV |
| Average Rectified Current | 23A |
| Number of Phases | 1 |
| Reverse Recovery Time | 140 ns |
| Peak Reverse Current | 100μA |
| Max Repetitive Reverse Voltage (Vrrm) | 1.2kV |
| Peak Non-Repetitive Surge Current | 50A |
| Recovery Time | 140 ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet