| Parameters | |
|---|---|
| Length | 12.95mm |
| Width | 6.86mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 10 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | PCB Mount |
| Number of Pins | 4 |
| Housing Material | Polysulfone |
| Operating Temperature | -40°C~85°C |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 100mW |
| Output Voltage | 30V |
| Output Type | Phototransistor |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Output Current | 82mA |
| Forward Current | 50mA |
| Response Time | 15μs |
| Rise Time | 15μs |
| Forward Voltage | 1.6V |
| Fall Time (Typ) | 15 μs |
| Collector Emitter Voltage (VCEO) | 30V |
| Sensing Distance | 0.200 (5.08mm) |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Reverse Breakdown Voltage | 3V |
| Sensing Method | Through-Beam |
| Collector Emitter Saturation Voltage | 400mV |
| Current - DC Forward (If) (Max) | 50mA |
| Input Current | 50mA |
| Touchscreen | Infrared (IR) |
| Dark Current | 100nA |
| Height | 6.35mm |