HN4B04J(TE85L,F)

HN4B04J(TE85L,F)

Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-HN4B04J(TE85L,F)
  • Package: SC-74A, SOT-753
  • Datasheet: -
  • Stock: 601
  • Description: Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity NPN, PNP
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100mA 1V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 30V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
RoHS Status RoHS Compliant
See Relate Datesheet

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