| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Package / Case | QFN EP |
| Number of Pins | 16 |
| Published | 1998 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 |
| Number of Terminations | 16 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Terminal Position | QUAD |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 8GHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 16 |
| Number of Elements | 5 |
| Polarity | NPN |
| Configuration | SEPARATE, 5 ELEMENTS |
| Power Dissipation-Max | 150mW |
| Power Dissipation | 150mW |
| Frequency (Max) | 8GHz |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 8 GHz |
| Collector Emitter Voltage (VCEO) | 8V |
| Max Collector Current | 65mA |
| JEDEC-95 Code | MO-220VEED-2 |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 8000MHz |
| Frequency - Transition | 8GHz |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | 5.5V |
| DC Current Gain-Min (hFE) | 40 |
| Continuous Collector Current | 65mA |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |