 
    | Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 12V | 
| Gain | 17.5 dB | 
| Transition Frequency | 10000MHz | 
| Max Breakdown Voltage | 12V | 
| Frequency - Transition | 10GHz | 
| Collector Base Voltage (VCBO) | 12V | 
| Emitter Base Voltage (VEBO) | 12V | 
| Continuous Collector Current | 30mA | 
| Radiation Hardening | No | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 6 Weeks | 
| Mount | Surface Mount | 
| Package / Case | SOIC | 
| Number of Pins | 14 | 
| Published | 2000 | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 3 | 
| Number of Terminations | 14 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) - annealed | 
| Max Operating Temperature | 85°C | 
| Min Operating Temperature | -40°C | 
| Additional Feature | AGC CIRCUIT | 
| Subcategory | Other Transistors | 
| Voltage - Rated DC | 8V | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Current Rating | 30mA | 
| Frequency | 10GHz | 
| Time@Peak Reflow Temperature-Max (s) | 30 | 
| Pin Count | 14 | 
| Number of Elements | 6 | 
| Polarity | NPN | 
| Configuration | COMPLEX | 
| Power Dissipation-Max | 250mW | 
| Power Dissipation | 250mW | 
| Frequency (Max) | 10GHz | 
| Transistor Application | AMPLIFIER | 
| Gain Bandwidth Product | 10 GHz | 
| Collector Emitter Voltage (VCEO) | 8V | 
| Max Collector Current | 30mA | 
| JEDEC-95 Code | MS-012AB |