FII50-12E
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2003 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Terminal Position | SINGLE |
| Pin Count | 5 |
| JESD-30 Code | R-PSIP-T5 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Case Connection | ISOLATED |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 50A |
| Current - Collector Cutoff (Max) | 400μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 2nF |
| Turn On Time | 135 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 490 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 2nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet