| Parameters | |
|---|---|
| Number of Terminations | 5 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 125W |
| Terminal Position | SINGLE |
| Current Rating | 40A |
| Pin Count | 5 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Rise Time | 50ns |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| Current - Collector Cutoff (Max) | 600μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 1.6nF |
| Turn On Time | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 310 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.6nF @ 25V |
| VCEsat-Max | 2.2 V |
| Height | 20.88mm |
| Length | 19.91mm |
| Width | 5.03mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 32 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Number of Pins | 5 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2011 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |