FII30-06D
| Parameters | |
|---|---|
| Factory Lead Time | 32 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 100W |
| Terminal Position | SINGLE |
| Pin Count | 5 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Power Dissipation | 100W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 50 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Turn-Off Delay Time | 300 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 30A |
| Current - Collector Cutoff (Max) | 600μA |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Input Capacitance | 1.1nF |
| Turn On Time | 105 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 330 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.1nF @ 25V |
| VCEsat-Max | 2.4 V |
| Height | 20.88mm |
| Length | 19.91mm |
| Width | 5.03mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet