FGD3N60UNDF
| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 60W |
| Terminal Form | GULL WING |
| Base Part Number | FGD3N60 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 6A |
| Reverse Recovery Time | 21ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.4V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 7.4 ns |
| Test Condition | 400V, 3A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.52V @ 15V, 3A |
| Turn Off Time-Nom (toff) | 146 ns |
| IGBT Type | NPT |
| Gate Charge | 1.6nC |
| Current - Collector Pulsed (Icm) | 9A |
| Td (on/off) @ 25°C | 5.5ns/22ns |
| Switching Energy | 52μJ (on), 30μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 8.5V |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet