| Parameters | |
|---|---|
| Factory Lead Time | 36 Weeks |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 10 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C |
| Published | 2012 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 10 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 10 |
| Number of Elements | 2 |
| Configuration | 2 Independent |
| Element Configuration | Dual |
| Power Dissipation | 5kW |
| Case Connection | ISOLATED |
| Power - Max | 5000W |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 800A |
| Current - Collector Cutoff (Max) | 16mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.7V |
| Turn On Time | 800 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 800A |
| Turn Off Time-Nom (toff) | 1150 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 55nF @ 25V |
| VCEsat-Max | 3.2 V |
| RoHS Status | RoHS Compliant |