FF200R33KF2CNOSA1
| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C |
| Published | 2002 |
| Pbfree Code | no |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-XUFM-X8 |
| Number of Elements | 2 |
| Configuration | 2 Independent |
| Element Configuration | Dual |
| Power Dissipation | 2.2kW |
| Case Connection | ISOLATED |
| Power - Max | 2200W |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Current - Collector Cutoff (Max) | 5mA |
| Collector Emitter Breakdown Voltage | 3.3kV |
| Voltage - Collector Emitter Breakdown (Max) | 3300V |
| Current - Collector (Ic) (Max) | 330A |
| Turn On Time | 480 ns |
| Vce(on) (Max) @ Vge, Ic | 4.25V @ 15V, 200A |
| Turn Off Time-Nom (toff) | 1900 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 25nF @ 25V |
| VCEsat-Max | 4.25 V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet