FDZ663P
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 525pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| Rise Time | 6.2ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 2.7A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Feedback Cap-Max (Crss) | 80 pF |
| Height | 150μm |
| Length | 800μm |
| Width | 800μm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, WLCSP |
| Number of Pins | 4 |
| Weight | 67mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 4.8 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 134m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
See Relate Datesheet