Parameters | |
---|---|
ECCN Code | EAR99 |
Resistance | 13MOhm |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 1W |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.5m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1705pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 12A 16A |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Rise Time | 11ns |
Fall Time (Typ) | 32 ns |
Turn-Off Delay Time | 54 ns |
Continuous Drain Current (ID) | 16A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Feedback Cap-Max (Crss) | 375 pF |
Height | 825μm |
Length | 5mm |
Width | 6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 16 Weeks |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 9mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |