| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 32.13mg |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 66W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| Transistor Application | SWITCHING |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 25V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 32A |
| JEDEC-95 Code | MO-240BA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Input Capacitance | 4.41nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 2.95mOhm |
| Rds On Max | 2 mΩ |
| Height | 950μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |