| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 2.8 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 1.6A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.299Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Schottky Diode (Isolated) |
| Nominal Vgs | 1 V |
| Height | 550μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 25.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 299m Ω @ 1.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Ta |