FDD8424H
| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Number of Pins | 5 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 24MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3.1W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Base Part Number | FDD8424 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| Power - Max | 1.3W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 9A 6.5A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 3ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 9A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 2.517mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet