DN3765K4-G
| Parameters | |
|---|---|
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 50 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8 Ω @ 150mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 825pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 300mA Tj |
| Rise Time | 75ns |
| Drive Voltage (Max Rds On,Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 100 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 300mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 8Ohm |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 0.5A |
| FET Feature | Depletion Mode |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.1mm |
See Relate Datesheet