| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.5 ns |
| Turn-Off Delay Time | 17.6 ns |
| Continuous Drain Current (ID) | 5.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 336pF |
| Drain to Source Resistance | 65mOhm |
| Rds On Max | 65 mΩ |
| Height | 1.5mm |
| Length | 4.95mm |
| Width | 3.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SOP |
| Weight | 850.995985mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 336pF @ 25V |