 
    | Parameters | |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Number of Pins | 3 | 
| Weight | 7.994566mg | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 1999 | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | MATTE TIN | 
| Additional Feature | HIGH RELIABILITY | 
| Subcategory | Other Transistors | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 1.08W Ta | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 1.08W | 
| FET Type | P-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 110m Ω @ 2.6A, 4.5V | 
| Vgs(th) (Max) @ Id | 1.25V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V | 
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 5.3nC @ 4.5V | 
| Drain to Source Voltage (Vdss) | 20V | 
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V | 
| Vgs (Max) | ±12V | 
| Continuous Drain Current (ID) | 2.6A | 
| Gate to Source Voltage (Vgs) | 12V | 
| DS Breakdown Voltage-Min | 20V | 
| Height | 1mm | 
| Length | 2.9mm | 
| Width | 1.3mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| Factory Lead Time | 6 Weeks | 
| RoHS Status | ROHS3 Compliant | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount |