 
    | Parameters | |
|---|---|
| Capacitance | 1.496nF | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 2.5W Ta | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Turn On Delay Time | 13.7 ns | 
| FET Type | P-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 38m Ω @ 5A, 4.5V | 
| Vgs(th) (Max) @ Id | 1.1V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 1496pF @ 15V | 
| Current - Continuous Drain (Id) @ 25°C | 6.5A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 14.4nC @ 4.5V | 
| Rise Time | 14ns | 
| Drain to Source Voltage (Vdss) | 20V | 
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V | 
| Vgs (Max) | ±8V | 
| Fall Time (Typ) | 35.5 ns | 
| Turn-Off Delay Time | 79.1 ns | 
| Continuous Drain Current (ID) | 6.5A | 
| Gate to Source Voltage (Vgs) | 8V | 
| Pulsed Drain Current-Max (IDM) | 25A | 
| DS Breakdown Voltage-Min | 20V | 
| Avalanche Energy Rating (Eas) | 26 mJ | 
| RoHS Status | ROHS3 Compliant | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | 
| Number of Pins | 8 | 
| Weight | 73.992255mg | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2014 | 
| JESD-609 Code | e3 | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 8 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) | 
| Additional Feature | HIGH RELIABILITY |