| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 30V |
| Factory Lead Time | 15 Weeks |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Mount | Surface Mount |
| Vgs (Max) | ±20V |
| Mounting Type | Surface Mount |
| Fall Time (Typ) | 7 ns |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Turn-Off Delay Time | 63 ns |
| Weight | 7.994566mg |
| Continuous Drain Current (ID) | 6A |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Operating Temperature | -55°C~150°C TJ |
| Drain Current-Max (Abs) (ID) | 6A |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Pulsed Drain Current-Max (IDM) | 24A |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Height | 1.1mm |
| Part Status | Active |
| Length | 3mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Width | 1.6mm |
| Number of Terminations | 3 |
| REACH SVHC | No SVHC |
| ECCN Code | EAR99 |
| RoHS Status | ROHS3 Compliant |
| Resistance | 30mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Lead Free | Lead Free |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |