DMN3016LFDF-7
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.02W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1415pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 25.1nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 10A |
| Drain-source On Resistance-Max | 0.012Ohm |
| DS Breakdown Voltage-Min | 30V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet