DMN2005LPK-7
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.2V @ 100μA |
| Current - Continuous Drain (Id) @ 25°C | 440mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4V |
| Vgs (Max) | ±10V |
| Continuous Drain Current (ID) | 440mA |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 0.4A |
| Drain to Source Breakdown Voltage | 20V |
| Height | 470μm |
| Length | 1mm |
| Width | 600μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-UFDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 450mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
See Relate Datesheet