 
    | Parameters | |
|---|---|
| Contact Plating | Gold | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | 8-PowerVDFN | 
| Number of Pins | 8 | 
| Weight | 72.007789mg | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2012 | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 5 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) | 
| Additional Feature | HIGH RELIABILITY | 
| Subcategory | Other Transistors | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| JESD-30 Code | S-PDSO-N5 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 940mW Ta | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Case Connection | DRAIN | 
| Turn On Delay Time | 11.3 ns | 
| FET Type | P-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 11m Ω @ 12A, 20V | 
| Vgs(th) (Max) @ Id | 3V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 2987pF @ 15V | 
| Current - Continuous Drain (Id) @ 25°C | 9.8A Ta | 
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | 
| Rise Time | 15.4ns | 
| Drain to Source Voltage (Vdss) | 30V | 
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 20V | 
| Vgs (Max) | ±25V | 
| Fall Time (Typ) | 22 ns | 
| Turn-Off Delay Time | 38 ns | 
| Continuous Drain Current (ID) | 9.8A | 
| Gate to Source Voltage (Vgs) | 25V | 
| Drain to Source Breakdown Voltage | -30V | 
| Height | 850μm | 
| Length | 3.35mm | 
| Width | 3.35mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |