DF200R12KE3HOSA1

DF200R12KE3HOSA1

IGBT MODULE VCES 1200V 200A


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-DF200R12KE3HOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 716
  • Description: IGBT MODULE VCES 1200V 200A (Kg)

Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
Number of Elements 1
Configuration Single
Power Dissipation 1.04kW
Case Connection ISOLATED
Power - Max 1040W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 295A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 830 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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