| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN (315) |
| HTS Code | 8541.21.00.95 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power - Max | 350mW |
| FET Type | N-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 4.5pF @ 15V |
| DS Breakdown Voltage-Min | 35V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 1.2 pF |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 2.5V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| RoHS Status | ROHS3 Compliant |