| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2000 |
| Series | IGBTMOD™ |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 735W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 735W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Collector Current | 450A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 250V |
| Input Capacitance | 132nF |
| Turn On Time | 1200 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 10V, 450A |
| Turn Off Time-Nom (toff) | 1400 ns |
| IGBT Type | Trench |
| NTC Thermistor | No |
| Input Capacitance (Cies) @ Vce | 132nF @ 10V |
| VCEsat-Max | 2.8 V |
| RoHS Status | Non-RoHS Compliant |