| Parameters | |
|---|---|
| VCEsat-Max | 3.1 V |
| RoHS Status | Non-RoHS Compliant |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2012 |
| Series | IGBTMOD™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 5.8kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation | 5.8kW |
| Case Connection | ISOLATED |
| Power - Max | 5800W |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Max Collector Current | 1kA |
| Current - Collector Cutoff (Max) | 2mA |
| Collector Emitter Breakdown Voltage | 1.4kV |
| Voltage - Collector Emitter Breakdown (Max) | 1400V |
| Current - Collector (Ic) (Max) | 1000A |
| Input Capacitance | 200nF |
| Turn On Time | 800 ns |
| Vce(on) (Max) @ Vge, Ic | 4.5V @ 15V, 1000A |
| Turn Off Time-Nom (toff) | 1850 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 200nF @ 10V |