 
    | Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | SOD-64, Axial | 
| Number of Pins | 2 | 
| Diode Element Material | SILICON | 
| Packaging | Tape & Reel (TR) | 
| Published | 2008 | 
| JESD-609 Code | e2 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Tin/Silver (Sn96.5Ag3.5) | 
| Max Operating Temperature | 175°C | 
| Min Operating Temperature | -55°C | 
| HTS Code | 8541.10.00.80 | 
| Subcategory | Rectifier Diodes | 
| Terminal Form | WIRE | 
| Current Rating | 3A | 
| Base Part Number | BYW86 | 
| Number of Elements | 1 | 
| Voltage | 1kV | 
| Element Configuration | Single | 
| Speed | Standard Recovery >500ns, > 200mA (Io) | 
| Current | 35A | 
| Diode Type | Avalanche | 
| Current - Reverse Leakage @ Vr | 1μA @ 1000V | 
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A | 
| Case Connection | ISOLATED | 
| Forward Current | 3A | 
| Operating Temperature - Junction | -55°C~175°C | 
| Max Surge Current | 100A | 
| Application | GENERAL PURPOSE | 
| Voltage - DC Reverse (Vr) (Max) | 1000V | 
| Forward Voltage | 1V | 
| Max Reverse Voltage (DC) | 1kV | 
| Average Rectified Current | 3A | 
| Number of Phases | 1 | 
| Reverse Recovery Time | 7.5 μs | 
| Peak Reverse Current | 1μA | 
| Max Repetitive Reverse Voltage (Vrrm) | 1kV | 
| Capacitance @ Vr, F | 60pF @ 4V 1MHz | 
| Peak Non-Repetitive Surge Current | 100A | 
| Reverse Voltage | 1kV | 
| Max Forward Surge Current (Ifsm) | 100A | 
| Recovery Time | 6 ns | 
| Radiation Hardening | No | 
| REACH SVHC | Unknown | 
| RoHS Status | ROHS3 Compliant |