 
    | Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks | 
| Contact Plating | Silver, Tin | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | SOD-57, Axial | 
| Number of Pins | 2 | 
| Diode Element Material | SILICON | 
| Packaging | Tape & Box (TB) | 
| Published | 2014 | 
| JESD-609 Code | e2 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Tin/Silver (Sn96.5Ag3.5) | 
| Max Operating Temperature | 175°C | 
| Min Operating Temperature | -55°C | 
| HTS Code | 8541.10.00.80 | 
| Subcategory | Rectifier Diodes | 
| Terminal Form | WIRE | 
| Peak Reflow Temperature (Cel) | 260 | 
| Current Rating | 2A | 
| Time@Peak Reflow Temperature-Max (s) | 30 | 
| Pin Count | 2 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Speed | Standard Recovery >500ns, > 200mA (Io) | 
| Diode Type | Avalanche | 
| Current - Reverse Leakage @ Vr | 1μA @ 800V | 
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A | 
| Case Connection | ISOLATED | 
| Forward Current | 2A | 
| Operating Temperature - Junction | -55°C~175°C | 
| Max Surge Current | 50A | 
| Output Current-Max | 2A | 
| Application | GENERAL PURPOSE | 
| Forward Voltage | 1V | 
| Max Reverse Voltage (DC) | 800V | 
| Average Rectified Current | 2A | 
| Number of Phases | 1 | 
| Reverse Recovery Time | 4 μs | 
| Peak Reverse Current | 1μA | 
| Max Repetitive Reverse Voltage (Vrrm) | 800V | 
| Peak Non-Repetitive Surge Current | 50A | 
| Reverse Voltage | 800V | 
| Max Forward Surge Current (Ifsm) | 50A | 
| Recovery Time | 4 μs | 
| Radiation Hardening | No | 
| REACH SVHC | Unknown | 
| RoHS Status | ROHS3 Compliant |