BUK9Y104-100B,115

BUK9Y104-100B,115

MOSFET N-CH 100V 14.8A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y104-100B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 441
  • Description: MOSFET N-CH 100V 14.8A LFPAK (Kg)

Details

Tags

Parameters
Avalanche Energy Rating (Eas) 35 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 59W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1139pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.8A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 14.8A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 59A
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good