BUK9K52-60E,115
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 32W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Pin Count | 8 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 32W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.2 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 49m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 725pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 10.1ns |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 10.7 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 10V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.055Ohm |
| Pulsed Drain Current-Max (IDM) | 64A |
| Avalanche Energy Rating (Eas) | 11.9 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet