| Parameters | |
|---|---|
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 5V |
| Technology | MOSFET (Metal Oxide) |
| Rise Time | 2.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Terminal Position | DUAL |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 1 ns |
| Terminal Form | GULL WING |
| Turn-Off Delay Time | 5.8 ns |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Continuous Drain Current (ID) | 1.4A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Pin Count | 3 |
| Max Dual Supply Voltage | 30V |
| Qualification Status | Not Qualified |
| Drain to Source Breakdown Voltage | 30V |
| Feedback Cap-Max (Crss) | 7 pF |
| Number of Elements | 1 |
| Height | 1.1mm |
| Number of Channels | 1 |
| Length | 2.9mm |
| Power Dissipation-Max | 500mW Ta |
| Factory Lead Time | 10 Weeks |
| Width | 1.3mm |
| REACH SVHC | No SVHC |
| Mount | Surface Mount |
| Element Configuration | Single |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Lead Free | Lead Free |
| Operating Mode | ENHANCEMENT MODE |
| Number of Pins | 3 |
| Power Dissipation | 500mW |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Turn On Delay Time | 3.4 ns |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Published | 2011 |
| Series | OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.4A, 10V |
| JESD-609 Code | e3 |
| Vgs(th) (Max) @ Id | 2V @ 3.7μA |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Halogen Free | Halogen Free |
| Number of Terminations | 3 |
| Input Capacitance (Ciss) (Max) @ Vds | 94pF @ 15V |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Current - Continuous Drain (Id) @ 25°C | 1.4A Ta |