BSS225H6327FTSA1

BSS225H6327FTSA1

Trans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3+Tab) SOT-89 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS225H6327FTSA1
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 822
  • Description: Trans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3+Tab) SOT-89 T/R (Kg)

Details

Tags

Parameters
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 90mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45 Ω @ 90mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 131pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 90mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain Current-Max (Abs) (ID) 0.09A
Drain to Source Breakdown Voltage 600V
Feedback Cap-Max (Crss) 4.4 pF
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Series SIPMOS®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet

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