BSS192PH6327FTSA1
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2002 |
| Series | SIPMOS® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.7 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 12 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds | 104pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 190mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 10V |
| Rise Time | 5.2ns |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | 190mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -250V |
| Drain to Source Breakdown Voltage | -250V |
| Feedback Cap-Max (Crss) | 8 pF |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet